transistor(npn) features z compliment to pxt3906 z low current z low voltage marking: 1a maximum ratings (t a =25 unless otherwise noted) symbol paramete r v alue units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 0.2 a p c collector power dissipation 0.5 w t j junction temperature 150 t st g storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 6 v collector cut-off current i cbo v cb =30v,i e =0 0.05 a cut-off current i ebo v eb =6v,i c =0 0.05 a h fe(1) v ce =1v,i c =0.1ma 60 h fe(2) v ce =1v,i c =1ma 80 h fe(3) v ce =1v,i c =10ma 100 300 h fe(4) v ce =1v,i c =50ma 60 dc current gain h fe(5) v ce =1v,i c =100ma 30 v ce(sat)1 i c =10ma,i b =1ma 0.2 v collector-emitter saturation voltage v ce(sat)2 i c =50ma,i b =5ma 0.3 v v be(sat)1 i c =10ma,i b =1ma 0.65 0.85 v base-emitter saturation voltage v be(sat)2 i c =50ma,i b =5ma 0.95 v transition frequency f t v ce =20v,i c =10ma,f=100mhz 300 mhz collector capacitance c c v cb =5v,i e =0,f=1mhz 4 pf emitter capacitance c e v eb =0.5v,i c =0,f=1mhz 8 pf noise figure nf v ce =5v,i c =0.1ma,f=10hz-15.7khz, r s =1k ? 5 db delay time t d 35 ns rise time t r 35 ns storage time t s 200 ns fall time t f i c =10ma , i b1 =-i b2 = 1ma 50 ns sot-89 1. base 2. collector 3. emitter 1 2 3 PXT3904 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics PXT3904 2 date:2011/05 www.htsemi.com semiconductor jinyu
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